近日，中国科研团队在半导体材料领域取得重大突破，成功攻克了一项长期困扰全球科技界的难题——高质量氮化镓（GaN）单晶衬底的低成本、大规模制备技术。氮化镓作为第三代半导体材料的核心代表，具有高耐压、高频率、高效率等优势，广泛应用于5G通信、新能源汽车、快充设备及国防电子系统等领域。然而，其晶体生长难度大、缺陷密度高、成本昂贵等问题，一直是产业化的主要瓶颈。由中国科学院某研究所牵头的联合攻关团队，通过创新性地采用新型熔体法与界面调控技术，显著提升了氮化镓单晶的纯度与结晶质量，同时将生产成本降低近60%。这一成果不仅打破了国外在高端半导体衬底材料上的技术垄断，也为我国自主可控的芯片产业链提供了关键支撑。专家指出，该技术有望在未来3至5年内实现量产，推动国产高性能功率器件和射频芯片加速落地，助力中国在全球半导体竞争中占据更有利位置。
Recently, a Chinese research team has achieved a major breakthrough in semiconductor materials by successfully solving a long-standing global challenge: the low-cost, large-scale production of high-quality gallium nitride (GaN) single-crystal substrates. As a key representative of third-generation semiconductors, GaN offers superior properties such as high breakdown voltage, high frequency, and high efficiency, making it essential for applications in 5G communications, electric vehicles, fast chargers, and defense electronics. However, its industrial adoption has been hindered by difficulties in crystal growth, high defect density, and prohibitive costs.Led by a research institute under the Chinese Academy of Sciences, a collaborative team developed an innovative melt-based method combined with advanced interface control techniques, significantly improving the purity and crystalline quality of GaN while reducing production costs by nearly 60%. This achievement not only breaks foreign monopolies on high-end semiconductor substrates but also strengthens China’s self-reliant chip supply chain. Experts predict that this technology could enter mass production within the next three to five years, accelerating the deployment of domestically produced high-performance power and RF chips and enhancing China’s competitive position in the global semiconductor industry.
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